source and drain in Chinese
Translation
Mobile
- 層連接晶體管柵極和源以及漏極
- "source" in Chinese : n. 1.源頭，水源，源泉。 2.根源，本源；來(lái)源。 3 ...
- "drain" in Chinese : vt. 1.排去(水等液體)，排泄，放干 (away; ...
- "drain and source diffusion" in Chinese : 源 漏擴(kuò)散
- "drain source breakdown voltage" in Chinese : 漏源擊穿電壓; 漏源極擊穿電壓
- "drain source resistance" in Chinese : 漏極源極電阻; 漏源電阻
- "drain source voltage" in Chinese : 漏源電壓
- "drain-source resistance" in Chinese : 漏源電阻
- "drain-source voltage" in Chinese : 漏源電壓
- "source and drain junction" in Chinese : 源漏結(jié)
- "source drain diode" in Chinese : 源極 漏極二極管
- "source drain voltage" in Chinese : 源極漏極電壓
- "source-and-drain junction" in Chinese : 場(chǎng)效應(yīng)晶體管的源漏結(jié); 源漏結(jié)
- "source-drain characteristics" in Chinese : 源漏特性
- "source-drain voltage" in Chinese : 源漏電壓; 源漏間電壓
- "zero drain source overlap" in Chinese : 源漏無(wú)重疊
Examples
- Thus it created a conductive n channel between the source and drain .
這樣在源和漏之間就產(chǎn)生了一個(gè)導(dǎo)電的n型溝道。 - In fet devices , the presence of an electrical field at the gate moderates the flow between the source and drain
在fet器件中，柵極電場(chǎng)的存在會(huì)調(diào)節(jié)源極和漏極之間的電流。 - It is found that the height of the metal electrode , the distance between the source and drain electrodes , the thickness of the sio
研究了場(chǎng)效應(yīng)納電子晶體管構(gòu)造過(guò)程中金屬電極的結(jié)構(gòu)設(shè)計(jì)，源-漏電極高度sio - In the design of the device , a kind of junction termination technology , polysilicon field plate was introduced at the edge of source and drain of the device . it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points
在器件設(shè)計(jì)過(guò)程中,在源端和漏端都采用了多晶場(chǎng)板技術(shù),減小了表面pn結(jié)和nn +處的峰值電場(chǎng),避免了器件在這兩處過(guò)早擊穿。 - Usually series mode is used in low frequency circuit while bypass mode is used in high frequency circuit , series mode micro - switch with cantilever structure is similar to an fet , when voltage is applied on gate , and the fet will be turned on between source and drain
有靜電電壓作用在梁和底面電極時(shí)，梁發(fā)生偏轉(zhuǎn)，在源極和漏極之間實(shí)現(xiàn)導(dǎo)通，常用于自控和通信系統(tǒng)的信號(hào)通路空氣橋旁路開(kāi)關(guān)主要用于微波段信號(hào)的通路。 - In order to do the research works above better , we must can precisely control the width of the quasi - 1d channel and the cut off point , and also must precisely inspire current in the 2deg , so we designed the 2 channel high precision and high stability voltage source , one channel can supply the minus voltage to the split - gate , and the other one can supply the offset voltage between the source and drain pole
為了進(jìn)行上述研究,必須能夠精確的控制準(zhǔn)一維電子通道的寬度和鉗斷,以及精確的在2deg上激勵(lì)電流,由此我們?cè)O(shè)計(jì)研發(fā)了給分裂門(mén)加負(fù)偏壓和給準(zhǔn)一維電子通道加源漏偏壓的兩路高精度高穩(wěn)定性饋源。 - It is believed that p - si tft will be the main type in the future panel display . among the process of manufacture p - si tft , the source and drain will have the superposition with grid for the reason of machine ’ s alignment error . the superposition will bring superposition capacitance and it will badly cut down the electric performance
在制備多晶硅tft時(shí),由于機(jī)器的套準(zhǔn)誤差會(huì)在柵極與源、漏極之間產(chǎn)生重疊部分,這樣就造成了柵源、柵漏之間的交疊電容,交疊電容的存在嚴(yán)重影響了多晶硅tft的性能,而利用自對(duì)準(zhǔn)工藝制備的多晶硅tft則避免了交疊電容的產(chǎn)生。
Related
"drains" in Chinese, "top draining" in Chinese, "drain stem" in Chinese, "formed drain" in Chinese, "slag drain" in Chinese, "diffused drain" in Chinese, "wound drain" in Chinese, "drain resistance" in Chinese, "draining kit" in Chinese, "source address wildcard" in Chinese, "source admittance" in Chinese, "source air pollution" in Chinese, "source alphabet" in Chinese, "source analyzer system" in Chinese, "source and drain junction" in Chinese, "source and sink" in Chinese, "source and sink doublet" in Chinese, "source and sink flow" in Chinese,
Neighbors
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